HCS161DMSR INTERSIL [Intersil Corporation], HCS161DMSR Datasheet

HCS161DMSR

Manufacturer Part Number

HCS161DMSR

Description

Radiation Hardened Synchronous Counter

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HCS161DMSR.pdf (9 pages)

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September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

• Cosmic Ray Upset Immunity 2 x 10

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

• Input Current Levels Ii

Description

The Intersil HCS161MS is a Radiation Hardened 4-Input Binary;

synchronous counter featuring asynchronous reset and look-

ahead carry logic. The HCS161 has an active-low master reset to

zero, MR. A low level at the synchronous parallel enable, SPE,

disables counting and allows data at the preset inputs (p0 - p3) to

load the counter. The data is latched to the outputs on the posi-

tive edge of the clock input, CP. The HCS161MS has two count

output, IC. The terminal count output indicates a maximum count

for one clock pulse and is used to enable the next cascaded

stage to count.

The HCS161MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS161MS is supplied in a 16 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

HCS161DMSR

HCS161KMSR

HCS161D/Sample

HCS161K/Sample

HCS161HMSR

Day (Typ)

- VIL = 0.3 VCC Max

- VIH = 0.7 VCC Min

PART NUMBER

RAD (Si)/s 20ns Pulse

5 A at VOL, VOH

TEMPERATURE RANGE

C to +125

-55

RAD (Si)/s

-9

Error/Bit Day (Typ)

C to +125

+25

/mg

-9

Errors/Bit-

193

Intersil Class S Equivalent

Sample

Die

SCREENING LEVEL

Pinouts

GND

HCS161MS

FLATPACK PACKAGE (FLATPACK)

16 LEAD CERAMIC DUAL-IN-LINE

16 LEAD CERAMIC METAL SEAL

METAL SEAL PACKAGE (SBDIP)

GND

MIL-STD-1835 CDFP4-F16

MIL-STD-1835 CDIP2-T16

Synchronous Counter

TOP VIEW

Radiation Hardened

16 Lead SBDIP

16 Lead Ceramic Flatpack

16 Lead SBDIP

16 Lead Ceramic Flatpack

Die

Spec Number

File Number

PACKAGE

SPEN

VCC

518755

2469.2

SPE

VCC

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HCS161DMSR Summary of contents

Page 1

... CMOS/SOS Logic Family. The HCS161MS is supplied lead Ceramic ﬂatpack (K sufﬁ SBDIP Package (D sufﬁx). Ordering Information PART NUMBER TEMPERATURE RANGE HCS161DMSR HCS161KMSR HCS161D/Sample HCS161K/Sample HCS161HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...

Page 2

Functional Diagram GND 8 SPE 9 T FF0 SPE OPERATING MODE MR Reset (Clear) L Parallel Load H H Count H Inhibit H ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPHL VCC = 4.5V TPLH TPHL VCC = 4.5V TPLH TPHL VCC = 4.5V TPLH TPHL VCC = 4.5V MR ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50 A Output Voltage High VOH VCC = 4.5V and 5.5V, VIH ...

Page 6

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 9

Die Characteristics DIE DIMENSIONS: 104 x 86 mils 2650 x 2190mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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