HCS273HMSR INTERSIL [Intersil Corporation], HCS273HMSR Datasheet

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HCS273HMSR

Manufacturer Part Number
HCS273HMSR
Description
Radiation Hardened Octal D Flip-Flop
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS273MS is a Radiation Hardened octal D flip-flop,
positive edge triggered, with reset.
The HCS273MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS273MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS273DMSR
HCS273KMSR
HCS273D/Sample
HCS273K/Sample
HCS273HMSR
Day (Typ)
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
336
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
SCREENING LEVEL
Pinouts
GND
MR
Q0
D0
D1
Q1
Q2
D2
D3
Q3
HCS273MS
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
MR
Q0
Q1
Q2
Q3
D0
D1
D2
D3
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
Octal D Flip-Flop
Spec Number
20
19
18
17
16
15
14
13
12
11
File Number
20
19
18
17
16
15
14
13
12
PACKAGE
11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
518767
2475.3
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP

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HCS273HMSR Summary of contents

Page 1

... The HCS273MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS273DMSR HCS273KMSR HCS273D/Sample HCS273K/Sample HCS273HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS273MS Pinouts 2 /mg -9 Errors/Bit- ...

Page 2

Functional Diagram RESET (MR NOTE The level of Q established by the last low to high transition of the clock ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPLH VCC = 4.5V TPHL VCC = 4. TPHL VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams and Load Circuit TR TF INPUT LEVEL 90 10% 10% TW TPHL Q VS FIGURE 1. CLOCK TO OUTPUT DELAYS AND CLOCK PULSE WIDTH INPUT LEVEL TH(L) TSU( FIGURE ...

Page 9

Die Characteristics DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

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