MC908GR16ACFA FREESCALE [Freescale Semiconductor, Inc], MC908GR16ACFA Datasheet - Page 40

no-image

MC908GR16ACFA

Manufacturer Part Number
MC908GR16ACFA
Description
M68HC08 Microcontrollers
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheets

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC908GR16ACFAE
Manufacturer:
FREESCALE
Quantity:
3 670
Part Number:
MC908GR16ACFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC908GR16ACFAE
Manufacturer:
FREESCALE
Quantity:
3 670
Part Number:
MC908GR16ACFAE
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
MC908GR16ACFAER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC908GR16ACFAER
Manufacturer:
FREESCALE
Quantity:
8 000
Memory
2.6.5 FLASH Program/Read Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, and $XXE0.
During the programming cycle, make sure that all addresses being written to fit within one of the ranges
specified above. Attempts to program addresses in different row ranges in one programming cycle will
fail. Use this step-by-step procedure to program a row of FLASH memory
representation).
This program sequence is repeated throughout the memory until all data is programmed.
40
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the row address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for a time, t
9. Repeat step 7 and 8 until all the bytes within the row are programmed.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
Programming and erasing of FLASH locations can not be performed by
code being executed from the same FLASH array.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
within the FLASH array memory space such as the COP control register
(COPCTL) at $FFFF.
It is highly recommended that interrupts be disabled during program/ erase
operations.
RCV
(typical 1 µs), the memory can be accessed in read mode again.
NVS
PGS
PROG
NVH
Only bytes which are currently $FF may be programmed.
(1)
(minimum 10 µs).
(minimum 5 µs).
(minimum 5 µs).
(minimum 30 µs).
MC68HC908GR16A Data Sheet, Rev. 1.0
NOTE
NOTE
NOTE
NOTE
NOTE
(Figure 2-4
Freescale Semiconductor
is a flowchart

Related parts for MC908GR16ACFA