BFP620E7764 INFINEON [Infineon Technologies AG], BFP620E7764 Datasheet - Page 2

• Manufacturer Part Number: BFP620E7764
• Description: NPN Silicon Germanium RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 50 mA, V
= 0.5 V, I
= 7.5 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
= 1.5 V
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
100
2.3
-
-
-
Values
typ.
180
2.8
-
-
-
BFP620_E7764
max.
100
320
10
Jul-03-2003
3
-
Unit
V
µA
nA
µA
-