BFP620E7764 INFINEON [Infineon Technologies AG], BFP620E7764 Datasheet - Page 6

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BFP620E7764

Manufacturer Part Number
BFP620E7764
Description
NPN Silicon Germanium RF Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Third order Intercept Point IP
(Output, Z
V
Power gain G
V
f = Parameter in GHz
CE
CE
dBm
dB
= parameter, f = 900MHz -
= 1.5V
27
21
18
15
12
30
26
24
22
20
18
16
14
12
10
9
6
3
0
8
0
0
10
10
S
=Z
20
20
L
ma
=50
30
, G
30

40
ms
)
40
50
=
0.8V

50
( I
60
C
60
)
70
3
=
70 mA

80 mA
( I
2.3V
1.8V
1.3V
C
I
I
)
C
C
0.9
1.8
2.4
3
4
5
6
100
90
6
Transition frequency f
f = 1GHz
V
Power Gain G
| S
V
CE
CE
GHz
21
dB
|² = f (f)
= Parameter in V
65
55
50
45
40
35
30
25
20
15
10
= 1.5V, I
55
45
40
35
30
25
20
15
10
5
0
5
0
0
10
|S21|²
1
20
C
ma
Gms
= 50mA
30
, G
2
0.3
40
ms
50
T
=
3
BFP620_E7764
=
Gma


60
0.5
( f ),
( I
C
4
70
)
Jul-03-2003
1.3 to 2.3
GHz
80 mA
I
f
1
0.8
C
100
6

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