BFP620E7764 INFINEON [Infineon Technologies AG], BFP620E7764 Datasheet - Page 3

• Manufacturer Part Number: BFP620E7764
• Description: NPN Silicon Germanium RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

1 G
2 IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
Collector emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
I
f = 6 GHz
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
C
C
C
C
CB
CE
EB
L
L
CE
S
ma
= 50 mA, V
= 5 mA, V
= 5 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= Z
= Z
= Z
= 0.5 V, f = 1 MHz
= 2 V, f = 1 MHz
= 2 V, f = 1 MHz
= 2 V, I
= | S
Lopt
Lopt
L
= 50
21e
, f = 6 GHz
, f = 1.8 GHz
/ S
C
CE
CE

CE
CE
CE
CE
CE
CE
= 50 mA, f = 1.8 GHz,
12e
= 1.5 V, f = 1.8 GHz, Z
= 1.5 V, f = 6 GHz, Z
| (k-(k²-1)
= 1.5 V, f = 1 GHz
= 1.5 V, Z
= 1.5 V, Z
= 1.5 V, Z
= 1.5 V, Z
= 2 V, Z
1/2
S
= Z
S
S
S
S
), G
= Z
= Z
= Z
= Z
1)
ms
L
A
= 50
1)
Sopt
Sopt
L
L
= | S
= 25°C, unless otherwise specified
= 50
= 50
2)
,
,
21e



S
,


from 0.1 MHz to 6 GHz
S
= Z
/ S
,
,
= Z
12e
Sopt
Sopt
|
3
Symbol
f
C
C
C
F
G
G
|S
IP
P
T
cb
ce
eb
-1dB
ms
ma
21e
3
|
2
min.
-
-
-
-
-
-
-
-
-
-
-
-
Values
21.5
0.12
0.22
0.46
typ.
0.7
1.3
9.5
20
25
15
65
11
BFP620_E7764
max.
0.2
Jul-03-2003
-
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB
dBm