BSS138LT1_05 ONSEMI [ON Semiconductor], BSS138LT1_05 Datasheet - Page 2

• Manufacturer Part Number: BSS138LT1_05
• Description: Power MOSFET 200 mA, 50 V N−Channel SOT−23
• Manufacturer: ONSEMI [ON Semiconductor]

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Source Leakage Current (V
Gate−Source Threshold Voltage
Static Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
DS
= 25 Vdc, V
= 50 Vdc, V
= V
= 25 Vdc, I
= 0 Vdc, I
= 2.75 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 1.0 mAdc)
D
D
= 250 mAdc)
GS
GS
D
= 200 mAdc, f = 1.0 kHz)
= 200 mAdc)
< 200 mAdc, T
= 0 Vdc)
= 0 Vdc)
Characteristic
GS
= ± 20 Vdc, V
A
= −40°C to +85°C)
(V
(V
(V
(T
DG
DS
DS
A
(V
= 25°C unless otherwise noted)
DD
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
= 30 Vdc, I
DS
= 0 Vdc)
http://onsemi.com
GS
GS
GS
BSS138LT1
D
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0.2 Adc,)
2
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
C
GS(th)
C
d(on)
d(off)
DSS
GSS
g
oss
rss
iss
fs
Min
100
0.5
50
−
−
−
−
−
−
−
−
−
−
Typ
5.6
3.5
40
12
−
−
−
−
−
−
−
−
−
Max
±0.1
0.1
0.5
1.5
3.5
5.0
10
50
25
20
20
−
−
mmhos
mAdc
mAdc
Unit
Vdc
Vdc
pF
ns
W