BSS138LT1_05 ONSEMI [ON Semiconductor], BSS138LT1_05 Datasheet - Page 3

• Manufacturer Part Number: BSS138LT1_05
• Description: Power MOSFET 200 mA, 50 V N−Channel SOT−23
• Manufacturer: ONSEMI [ON Semiconductor]

0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
−55
T
J
1
= 25°C
Figure 1. On−Region Characteristics
Figure 3. On−Resistance Variation with
V
DS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−5
T
J
3
, JUNCTION TEMPERATURE (°C)
V
4
GS
Temperature
= 3.5 V
5
45
10
8
6
4
2
0
TYPICAL ELECTRICAL CHARACTERISTICS
6
0
V
T
DS
J
7
= 25°C
V
I
D
= 40 V
GS
500
V
= 0.8 A
95
V
V
GS
V
GS
GS
= 10 V
8
GS
= 3.25 V
= 3.0 V
= 2.75 V
V
I
D
= 2.5 V
GS
= 0.5 A
Q
http://onsemi.com
9
T
Figure 5. Gate Charge
= 4.5 V
1000
, TOTAL GATE CHARGE (pC)
BSS138LT1
10
145
I
D
3
1500
= 200 mA
1.125
0.875
1.25
0.75
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
−55
0
2000
0
V
DS
−30
0.5
Figure 4. Threshold Voltage Variation
= 10 V
Figure 2. Transfer Characteristics
2500
V
GS
−5
T
1
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
with Temperature
1.5
3000
20
I
D
2
= 1.0 mA
45
− 55°C
2.5
70
3
95
25°C
3.5
120
150°C
4
145
4.5