ISL6531 Intersil Corporation, ISL6531 Datasheet

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ISL6531

Manufacturer Part Number
ISL6531
Description
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination
Manufacturer
Intersil Corporation
Datasheet

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Dual 5V Synchronous Buck Pulse-Width
Modulator (PWM) Controller for DDRAM
Memory V
The ISL6531 provides complete control and protection for
dual DC-DC converters optimized for high-performance
DDRAM memory applications. It is designed to drive low
cost N-channel MOSFETs in synchronous-rectified buck
topology to efficiently generate 2.5V V
DDRAM memory, V
and V
the control, output adjustment, monitoring and protection
functions into a single package.
The V
through an integrated precision voltage reference. The V
output is precisely regulated to 1/2 the memory power
supply, with a maximum tolerance of ±1% over temperature
and line voltage variations. V
During V2_SD sleep mode, the V
a low power window regulator.
The ISL6531 provides simple, single feedback loop, voltage-
mode control with fast transient response for the V
regulator. The V
that eases the design. It includes two phase-locked 300kHz
triangle-wave oscillators which are displaced 90
minimize interference between the two PWM regulators. The
regulators feature error amplifiers with a 15MHz gain-
bandwidth product and 6V/µs slew rate which enables high
converter bandwidth for fast transient performance. The
resulting PWM duty ratio ranges from 0% to 100%.
The ISL6531 protects against overcurrent conditions by
inhibiting PWM operation. The ISL6531 monitors the current
in the V
MOSFET which eliminates the need for a current sensing
resistor.
Ordering Information
ISL6531CB
ISL6531CR
ISL6530/31EVAL1 Evaluation Board
PART NUMBER
TT
DDQ
DDQ
for signal termination. The ISL6531 integrates all of
output of the converter is maintained at 2.5V
regulator by using the r
DDQ
TT
RANGE(
regulator features internal compensation
REF
0 to 70
0 to 70
TEMP
and V
for DDRAM differential signalling,
o
®
C)
TT
TT
1
24 Lead SOIC
32 Lead 5x5 QFN L32.5x5
accurately tracks V
TT
PACKAGE
Termination
DS(ON)
Data Sheet
output is maintained by
DDQ
for powering
of the upper
PKG. DWG. #
M24.3
o
to
DDQ
REF
.
1-888-INTERSIL or 321-724-7143
REF
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Provides V
• Excellent voltage regulation
• Supports ‘S3’ sleep mode
• Fast transient response
• Operates from +5V Input
• V
• Overcurrent fault monitor on VDD
• Drives inexpensive N-Channel MOSFETs
• Small converter size
• 24 Lead, SOIC or 32 Lead, 5mm×5mm QFN
Applications
• V
• High-power tracking DC-DC regulators
two- channel DDRAM memory systems
- V
- V
- V
- V
- Full 0% to 100% duty ratio
- Does not require extra current sensing element
- Uses MOSFET’s r
- 300kHz fixed frequency oscillator
systems
- Main memory in AMD® Athlon™ and K8™, Pentium®
TT
DDQ
regulator to minimize wake-up time
III, Pentium IV, Transmeta, PowerPC™, AlphaPC™,
and UltraSparc® based computer systems
DDQ
REF
TT
TT
regulator internally compensated
, V
All other trademarks mentioned are the property of their respective owners.
= V
is held at
=
|
= 2.5V ±2% over full operating range
TT
Intersil (and design) is a registered trademark of Intersil Americas Inc.
REF
DDQ
, and VREF regulation for DDRAM memory
1
-- - V
2
July 2003
± 30mV
, V
DDQ
Copyright © Intersil Americas Inc. 2003. All Rights Reserved.
1
-- - V
2
REF
DS(ON)
±1% over full operating range
DDQ
, and V
via a low power window
TT
voltages for one- and
ISL6531
FN9053.1

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ISL6531 Summary of contents

Page 1

... Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory V and V Termination DDQ TT The ISL6531 provides complete control and protection for dual DC-DC converters optimized for high-performance DDRAM memory applications designed to drive low cost N-channel MOSFETs in synchronous-rectified buck topology to efficiently generate 2.5V V DDQ DDRAM memory, V ...

Page 2

... VREF 4 20 FB1 COMP1 18 7 SENSE1 17 VREF_IN GNDA 15 PHASE2 BOOT2 13 UGATE2 12 2 ISL6531 PGND1 LGATE1 PVCC1 OCSET/SD PHASE 1 V2_SD VREF PGOOD N/C FB1 SENSE2 COMP1 N/C SENSE1 VCC LGATE2 VREF_IN PGND2 GNDA GNDA 32 LEAD 5X5 (QFN) TOP VIEW ...

Page 3

... Block Diagram PGOOD FB1 COMP1 SENSE1 VREF_IN + VREF - SENSE2 V2_SD 3 ISL6531 OCSET/SD VCC POWER-ON RESET (POR) + SOFT- - 40µA START OVER- CURRENT PWM ERROR COMPARATOR AMP INHIBIT + + - - PWM 0.8V REFERENCE OSCILLATOR o 90 Phase Shift ERROR AMP + - Z f PWM - + Z c INHIBIT PWM COMPARATOR WINDOW ...

Page 4

... VREF COMP1 FB1 R FB1 4 ISL6531 PGOOD VCC PGOOD BOOT1 UGATE1 PHASE1 PVCC1 LGATE1 ISL6531 PGND1 D BOOT2 UGATE2 C PHASE2 LGATE2 PGND2 SENSE1 SENSE2 FIGURE 1. TYPICAL APPLICATION FOR ISL6531 D BOOT1 BOOT1 L OUT1 +5V C OUT1 Q 2 BOOT2 Q 3 BOOT2 L OUT2 OUT2 V DDQ ...

Page 5

... Upper Gate Source (UGATE1 and 2) Upper Gate Sink (UGATE1 and 2) Lower Gate Source (LGATE1 and 2) Lower Gate Sink (LGATE1 and 2) PROTECTION OCSET/SD Current Source OCSET/SD Disable Voltage 5 ISL6531 Thermal Information Thermal Resistance SOIC Package (Note +0.3V CC QFN Package (Note 2 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150 Maximum Storage Temperature Range ...

Page 6

... I PEAK An overcurrent trip cycles the soft-start function. Pulling the OCSET/SD pin to ground resets the ISL6531 and all external MOSFETS are turned off allowing the two output voltage power rails to float. PGOOD A high level on this open-drain output indicates that both the ...

Page 7

... V2_SD mode. Functional Description Overview The ISL6531 contains control and drive circuitry for two synchronous buck PWM voltage regulators. Both regulators utilize 5V bootstrapped output topology to allow use of low cost N-Channel MOSFETs. The regulators are driven by ...

Page 8

... The only load placed on the V the leakage of the associated signal pins of the DDRAM and memory controller ICs. 8 ISL6531 When the V2_SD input of the ISL6531 is driven high, the V regulator is placed into a “sleep” state. In the sleep state TT the main V VCC (5V) lower MOSFETs being turned off ...

Page 9

... LOW. Upon release of the OCSET/SD pin, the IC enters into a soft start cycle which brings both outputs back into regulation. Voltage Monitoring The ISL6531 offers a PGOOD signal that will communicate whether the regulation of both V and V DDQ ±15% of regulation, the V2_SD pin is held low and the bias voltage of the IC is above the POR level ...

Page 10

... TT through protection method which allows the converter to sink current as well as source current. Care should be exercised when designing a converter with the ISL6531 when it is known that the converter may sink current. When the converter is sinking current behaving as a boost converter that is regulating its input voltage. This means that the converter is boosting current into the input rail of the regulator ...

Page 11

... VIA CONNECTION TO GROUND PLANE FIGURE 7. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS The switching components should be placed close to the ISL6531 first. Minimize the length of the connections between the input capacitors and the power switches IN by placing them nearby. Position both the ceramic and bulk input capacitors as close to the upper MOSFET drain as possible ...

Page 12

... The compensation network consists of the error amplifier (internal to the ISL6531) and the impedance networks Z and Z . The goal of the compensation network is to provide FB a closed loop transfer function with the highest 0dB crossing frequency (f ) and adequate phase margin. Phase margin 0dB is the difference between the closed loop phase at f 180 degrees. The equations below relate the compensation network’ ...

Page 13

... Given a sufficiently fast control loop design, the ISL6531 will provide either 0% or 100% duty cycle in response to a load transient. The response time is the time required to slew the inductor current from an initial current value to the transient current level ...

Page 14

... MOSFET’s body diode. The gate-charge losses are dissipated by the ISL6531 and don't heat the MOSFETs. However, large gate-charge increases the switching interval, t increases the MOSFET switching losses. ...

Page 15

... ISL6531 DC-DC Converter Application Circuit Figure 11 shows an application circuit for a DDR SDRAM power supply, including V (+2.5V) and V DDQ Detailed information on the circuit, including a complete Billof-Materials and circuit board description, can be found V2_SD PGOOD VREF VREF_IN C 30 100pF GNDA C 26 5600pF COMP1 100pF 6.34kΩ ...

Page 16

... The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch) 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 16 ISL6531 M24.3 (JEDEC MS-013-AD ISSUE C) 24 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE SYMBOL M ...

Page 17

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 17 ISL6531 L32.5x5 32 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220VHHD-2 ISSUE C ...

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