TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 36

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TE28F008xxx

Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
30
AC Characteristics—Write Operations, continued
NOTES:
1. Refer to command definition table
2. Write pulse width (t
3. Sampled, but not 100% tested.
W10
W11
W1
W2
W3
W4
W5
W6
W7
W8
W9
high (whichever goes high first). Hence, t
high (t
(whichever goes low first). Hence, t
Read timing characteristics during program suspend and erase suspend are the same as during read-only
operations.
See
See
#
Figure 5
Figure 8, “AC Waveform: Program and Erase Operations” on page
WPH
t
t
t
t
t
t
t
t
t
t
t
DVWH
WHEH
t
WHDX
WHWL /
PHWL
AVWH
WHAX
VPWH
t
t
t
t
t
t
t
ELWL
ELEH
t
t
WLWH
EHWH
Sym
WLEL
DVEH
AVEH
EHDX
EHAX
VPEH
QVVL
PHEL
EHEL
) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
/
/
/
/
/
/
/
/
/
for timing measurements and maximum allowable input slew rate.
RP# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold Time from WE# (CE#) High
Data Hold Time from WE# (CE#) High
Address Hold Time from WE# (CE#) High
WE# (CE#) Pulse Width High
V
V
PP
PP
WP
Hold from Valid SRD
Setup to WE# (CE#) Going High
) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going
Parameter
(Table
WPH
= t
WP
6) for valid A
WHWL
= t
WLWH
= t
EHEL
= t
IN
ELEH
or D
= t
WHEL
IN
= t
.
WLEH
Product
Density
= t
EHWL
Note
V
= t
2
1
2
2
2
1
3
3
CC
32.
ELWH
.
2.7 V –
. Similarly, Write pulse width
90 ns
3.6 V
Min
150
200
60
40
60
30
0
0
0
0
0
64 Mbit
100 ns
2.7 V –
3.6 V
Min
150
200
70
60
30
40
0
0
0
0
0
3UHOLPLQDU\
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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