HN58C65FP-25 Hitachi Semiconductor, HN58C65FP-25 Datasheet - Page 5

• Manufacturer Part Number: HN58C65FP-25
• Description: 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
• Manufacturer: Hitachi Semiconductor

DC Characteristics (Ta = 0 to +70 C, V
Parameter
Input leakage current
Output leakage current
V
V
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Note:
Capacitance (Ta = 25 C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Note:
AC Characteristics (Ta = 0 to +70 C, V
Test Conditions
•
•
•
•
CC
CC
Input pulse levels: 0.4 V to 2.4 V
Input rise and fall time:
Output load: 1TTL gate + 100 pF
Reference levels for measuring timing: 0.8 V and 2 V
current (Standby)
current (Active)
1. –1.0 V for pulse width
1. This parameter is periodically sampled and not 100% tested.
*1
*1
Symbol
I
I
I
I
V
V
V
V
Symbol
Cin
Cout
LI
LO
CC1
CC2
IL
IH
OL
OH
20 ns
50 ns
Min
—
—
—
—
—
–0.3
2.2
—
2.4
Min
—
—
*1
CC
CC
Typ
—
—
—
—
—
—
—
—
—
Typ
—
—
= 5 V 10%)
= 5 V 10%)
5
Max
2
2
1
8
25
0.8
V
0.4
—
Max
6
12
CC
+ 1
Unit
mA
mA
mA
V
V
V
V
Unit
pF
pF
A
A
Test Conditions
V
Vin = 5.5 V
V
Vout = 5.5/0.4 V
CE = V
Iout = 0 mA
Duty = 100%
Cycle = 1 s at
V
Iout = 0 mA
Duty = 100%
Cycle = 250 ns at
V
I
I
Test Conditions
Vin = 0 V
Vout = 0 V
OL
OH
HN58C65 Series
CC
CC
CC
CC
= –400 A
= 2.1 mA
= 5.5 V
= 5.5 V
= 5.5 V
= 5.5 V
IH
, CE = V
CC