2SK1161 Hitachi Semiconductor, 2SK1161 Datasheet
2SK1161
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2SK1161 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO- Gate 2. Drain (Flange) 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1161 I drain current 2SK1162 Gate to source cutoff voltage Static Drain to source 2SK1161 R on state resistance 2SK1162 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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... Power vs. Temperature Derating 120 Case Temperature T Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 4 100 30 10 1.0 0.3 0.1 100 150 (° Pulse Width PW (s) Maximum Safe Operation Area 25°C 2SK1162 2SK1161 100 300 ...
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Max 0.9 3.6 1.0 5.45 0.5 4.8 0.2 1.0 0.2 0.6 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 1.5 2.8 0.2 TO-3P — Conforms 5.0 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...