K6R1008C1B- Samsung semiconductor, K6R1008C1B- Datasheet - Page 2

• Manufacturer Part Number: K6R1008C1B-
• Description: 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

FEATURES
FUNCTIONAL BLOCK DIAGRAM
K6R1008C1B-C, K6R1008C1B-I
128K x 8 Bit High-Speed CMOS Static RAM
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
• Single 5.0V 10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
CS
WE
OE
A
A
A
A
A
A
A
A
Operating
- No Clock or Refresh required
Standby (TTL)
0
1
2
3
4
5
6
7
I/O
1
~I/O
8
(CMOS) : 10mA(Max.)
K6R1008C1B-J : 32-SOJ-400
K6R1008C1B-T: 32-TSOP2-400CF
K6R1008C1B-8 : 160mA(Max.)
K6R1008C1B-10 : 155mA(Max.)
K6R1008C1B-12 : 150mA(Max.)
Clk Gen.
: 50mA(Max.)
Cont.
Data
Gen.
CLK
A
8
A
9
Pre-Charge Circuit
A
512x8 Columns
Column Select
Memory Array
10
256 Rows
I/O Circuit
A
11
A
12
A
13
A
14
A
15
A
16
- 2 -
ORDERING INFORMATION
GENERAL DESCRIPTION
PIN CONFIGURATION
PIN FUNCTION
The K6R1008C1B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits. The
K6R1008C1B uses 8 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
K6R1008C1B is packaged in a 400mil 32-pin plastic SOJ or
TSOP2 forward.
K6R1008C1B-C8/C10/C12
K6R1008C1B-I8/I10/I12
I/O
Pin Name
A
0
1
V
V
N.C
WE
CS
OE
I/O
I/O
I/O
I/O
- A
Vcc
Vss
WE
CS
~ I/O
A
A
A
A
A
A
A
A
CC
SS
0
1
2
3
4
5
6
7
1
2
3
4
16
10
11
12
13
14
15
16
8
1
2
3
4
5
6
7
8
9
high-speed
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
TSOP2
SOJ/
system
(Top View)
Pin Function
CMOS SRAM
PRELIMINARY
Commercial Temp.
Industrial Temp.
Preliminary
PRELIMINARY
PRELIMINARY
applications.
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
February 1998
A
A
A
A
I/O
I/O
Vss
Vcc
I/O
I/O
A
A
A
OE
A
A
16
15
14
13
12
11
10
9
8
8
7
6
5
Rev 2.0
The