K6R1008C1B- Samsung semiconductor, K6R1008C1B- Datasheet - Page 4

• Manufacturer Part Number: K6R1008C1B-
• Description: 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

K6R1008C1B-C, K6R1008C1B-I
AC CHARACTERISTICS
TEST CONDITIONS*
*
Output Loads(A)
D
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
* Capacitive Load consists of all components of the
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
The a
OUT
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
test environment.
bove test conditions are also applied at industrial temperature range.
Z
O
= 50
Parameter
Parameter
(T
A
=0 to 70 C, V
R
L
= 50
30pF*
Symbol
t
t
t
t
t
t
t
t
OLZ
t
OHZ
t
t
RC
AA
CO
OE
HZ
OH
PU
PD
LZ
V
L
CC
= 1.5V
=5.0V 10%, unless otherwise noted.)
K6R1008C1B-8
Min
8
3
0
0
0
3
0
-
-
-
-
- 4 -
Output Loads(B)
for t
Max
HZ
8
8
4
4
4
8
-
-
-
-
-
, t
LZ
* Including Scope and Jig Capacitance
, t
WHZ
K6R1008C1B-10
Min
10
, t
3
0
0
0
3
0
-
-
-
-
OW
D
255
OUT
, t
OLZ
See below
0V to 3V
Max
Value
1.5V
& t
10
10
10
3ns
5
5
5
-
-
-
-
-
OHZ
CMOS SRAM
K6R1008C1B-12
PRELIMINARY
Min
12
3
0
0
0
3
0
-
-
-
-
Preliminary
PRELIMINARY
PRELIMINARY
+5.0V
480
5pF*
February 1998
Max
12
12
12
6
6
6
-
-
-
-
-
Rev 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns