K6R1008C1B- Samsung semiconductor, K6R1008C1B- Datasheet - Page 5

• Manufacturer Part Number: K6R1008C1B-
• Description: 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
K6R1008C1B-C, K6R1008C1B-I
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width (OE High)
Write Pulse Width (OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
V
Current
Address
CS
OE
Data out
Address
Data Out
CC
Parameter
I
I
SB
CC
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
WC
CW
AW
WP
WR
DW
OW
DH
AS
t
PU
t
LZ(4,5)
(WE=V
(Address Controlled
t
OLZ
K6R1008C1B-8
Min
t
OH
8
6
0
6
6
8
0
0
4
0
3
50%
t
AA
IH
)
t
CO
- 5 -
t
OE
t
AA
Max
4
-
-
-
-
-
-
-
-
-
-
,
CS=OE=V
t
RC
t
RC
K6R1008C1B-10
Min
10
10
IL
7
0
7
7
0
0
5
0
3
, WE=V
Valid Data
IH
)
Max
5
-
-
-
-
-
-
-
-
-
-
t
Valid Data
OHZ
CMOS SRAM
K6R1008C1B-12
Min
PRELIMINARY
12
12
8
0
8
8
0
0
6
0
3
50%
t
t
t
OH
PD
HZ(3,4,5)
Preliminary
PRELIMINARY
PRELIMINARY
February 1998
Max
6
-
-
-
-
-
-
-
-
-
-
Rev 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns