K6T4016U3C Samsung semiconductor, K6T4016U3C Datasheet

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K6T4016U3C

Manufacturer Part Number
K6T4016U3C
Description
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
K6T4016U3C-TB10
Manufacturer:
SAMSUNG
Quantity:
5 600
Part Number:
K6T4016U3C-TB10
Manufacturer:
SAMSUNG
Quantity:
5 600
Part Number:
K6T4016U3C-TB10
Manufacturer:
SAMSUNG
Quantity:
5 704
Part Number:
K6T4016U3C-TB70
Quantity:
6 250
Part Number:
K6T4016U3C-TB85
Manufacturer:
SAMSUNG
Quantity:
5 300
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Document Title
Revision History
K6T4016V3C, K6T4016U3C Family
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision No
2.01
0.11
0.0
0.1
1.0
2.0
History
Initial draft
Revise
Errata correction
Finalize
Revise
Revise
- Speed bin change
- DC Characteristics change
- Add K6T4016V3C-TB55 product
- Improved V
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
I
I
I
I
I
CC
CC1
CC2
SB
SB1
: 0.5mA to 0.3mA
: 5mA at read/write to 4mA at read
: 5mA to 6mA
: 50mA to 45mA
: 10 A to 15 A for commercial parts
OH
(output high voltage) from 2.2V to 2.4V.
1
Draft Date
January 13, 1998
June 12, 1998
August 13, 1998
November 16, 1998
June 26, 2001
October 15, 2001
CMOS SRAM
Remark
Preliminary
Final
Final
Final
Advance
Revision 2.01
October 2001

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K6T4016U3C Summary of contents

Page 1

... K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change I : 5mA at read/write to 4mA at read 5mA to 6mA CC1 ...

Page 2

... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6T4016V3C and K6T4016U3C families are fabricated by SAMSUNG s advanced CMOS process technology. The fami- lies support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current ...

Page 3

... K6T4016V3C, K6T4016U3C Family PRODUCT LIST Commercial Temperature Product(0~70 C) Part Name Function K6T4016V3C-TB55 44-TSOP2-F, 55ns, 3.3V, LL K6T4016V3C-TB70 44-TSOP2-F, 70ns, 3.3V, LL K6T4016V3C-TB85 44-TSOP2-F, 85ns, 3.3V, LL K6T4016V3C-TB10 44-TSOP2-F, 100ns, 3.3V, LL K6T4016V3C-RB70 44-TSOP2-R, 70ns, 3.3V, LL K6T4016V3C-RB85 44-TSOP2-R, 85ns, 3.3V, LL K6T4016V3C-RB10 44-TSOP2-R, 100ns, 3.3V, LL K6T4016U3C-TB70 44-TSOP2-F, 70ns, 3.0V, LL K6T4016U3C-TB85 44-TSOP2-F, 85ns, 3.0V, LL K6T4016U3C-TB10 44-TSOP2-F, 100ns, 3.0V, LL K6T4016U3C-RB70 44-TSOP2-R, 70ns, 3 ...

Page 4

... Output high voltage V OH Standby Current(TTL Standby Current(CMOS) I SB1 A 1. Industrial product = 20 2. Cycle time = 70ns 1) Product K6T4016V3C Family K6T4016U3C Family All Family K6T4016V3C, K6T4016U3C Family K6T4016V3C, K6T4016U3C Family 30ns Test Condition Test Conditions V =Vss to Vcc ...

Page 5

... Input and output reference voltage: 1.5V Output load(see right): C =100pF+1TTL L C =30pF+1TTL L AC CHARACTERISTICS (K6T4016V3C Family: Vcc=3.0~3.6V, K6T4016U3C Family: Vcc=2.7~3.3V Commercial product: T Parameter List Read cycle time Address access time Chip select to output Output enable to valid output LB, UB valid to data output Chip select to low-Z output ...

Page 6

... K6T4016V3C, K6T4016U3C Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

Page 7

... K6T4016V3C, K6T4016U3C Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS UB Data in High-Z Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS UB Data in Data out High-Z (WE Controlled CW( WP(1) t AS( Data Valid t WHZ (CS Controlled AS(3) CW( ...

Page 8

... measured from the end of write to the address change DATA RETENTION WAVE FORM CS controlled V CC 3.0/2. GND 1. 3.0V for K6T4016V3C Family, 2.7V for K6T4016U3C Family (UB, LB Controlled CW( AS(3) t WP( Data Valid is measured from the beginning of write to the end of write ...

Page 9

... K6T4016V3C, K6T4016U3C Family PACKAGE DIMENSIONS 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F) #44 #1 18.81 MAX. 0.741 18.41 0.10 0.725 0.004 0.35 0.805 0. 0.032 0.014 0.004 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R) #1 #44 18.81 MAX. 0.741 18.41 0.10 0.725 0.004 0.35 0.805 0. 0.032 0.014 0.004 #23 11.76 0.20 0.463 0.008 #22 1.00 0.10 0.039 0.004 1 ...

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