K6T4016U3C Samsung semiconductor, K6T4016U3C Datasheet - Page 2

• Manufacturer Part Number: K6T4016U3C
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: Samsung semiconductor

I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
A17
A16
A15
A14
A13
I/OI
Vcc
Vss
WE
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
PIN DESCRIPTION
CS
A4
A3
A2
A1
A0
K6T4016V3C, K6T4016U3C Family
I/O
K6T4016V3C Family: 3.0~3.6V
K6T4016U3C Family: 2.7~3.3V
Process Technology: TFT
Organization: 256K x16
Power Supply Voltage
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F/R
Product Family
K6T4016U3C-B
A
K6T4016V3C-B
K6T4016V3C-F
K6T4016U3C-F
Name
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
1
WE
OE
CS
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
~A
~I/O
17
44-TSOP2
16
Forward
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Input/Output
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Operating Temperature Vcc Range
Commercial(0~70 C)
Industrial(-40~85 C)
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
I/O16
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
Vss
Vcc
A10
A11
A12
OE
NC
UB
A5
A6
A7
LB
A8
A9
Name Function
Vcc
Vss
UB
NC
LB
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
44-TSOP2
Power
Ground
Lower Byte (I/O
Upper Byte (I/O
No Connection
Reverse
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
1~8
9~16
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
)
)
55
70
Speed(ns)
1)
/70
1)
GENERAL DESCRIPTION
SAMSUNG s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FUNCTIONAL BLOCK DIAGRAM
The K6T4016V3C and K6T4016U3C families are fabricated by
/85/100
2
I/O
1)
/85/100
9
~I/O
WE
OE
UB
LB
CS
I/O
16
1
~I/O
Control
logic
8
A0
A1
A2
A3
A4
A13
A14
A15
A16
A17
(I
Standby
SB1
15 A
20 A
Power Dissipation
, Max)
Clk gen.
Data
cont
Data
cont
Data
cont
Row
select
(I
Operating
CC2
45mA
, Max)
A5 A6 A7 A8 A9
Precharge circuit.
CMOS SRAM
Memory array
1024 rows
256 16 columns
Column select
I/O Circuit
44-TSOP2-400F/R
PKG Type
A10
Revision 2.01
October 2001
A11
A12
Vcc
Vss