K6T4016U3C Samsung semiconductor, K6T4016U3C Datasheet - Page 4

• Manufacturer Part Number: K6T4016U3C
• Description: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: Samsung semiconductor

RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -2.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Industrial product = 20
2. Cycle time = 70ns
K6T4016V3C, K6T4016U3C Family
Supply voltage
Ground
Input high voltage
Input low voltage
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Input capacitance
Input/Output capacitance
Industrial Product: T
Item
CC
Item
+2.0V in case of pulse width
Item
A
=-40 to 85 C, otherwise specified
A
1)
=0 to 70 C, otherwise specified
A
(f=1MHz, T
Symbol
Vcc
Vss
V
V
Symbol
A
IH
IL
=25 C)
I
I
V
V
I
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
LI
OL
OH
30ns
Symbol
30ns
C
C
K6T4016V3C, K6T4016U3C Family
K6T4016V3C, K6T4016U3C Family
V
CS=V
I
Cycle time=1 s, 100% duty, I
V
Cycle time=Min
V
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
IO
IN
IO
OL
OH
IL
IN
IN
=0mA, CS=V
=Vss to Vcc
=2.1mA
=-1.0mA
=V
0.2V or V
IH
IH
IH
K6T4016V3C Family
K6T4016U3C Family
, Other inputs=V
or OE=V
or V
All Family
IL
Product
IN
2)
IL
Test Condition
, 100% duty, I
Vcc-0.2V
IH
, V
or WE=V
IN
V
V
Test Conditions
=V
IN
IO
=0V
=0V
4
1)
IL
IL
or V
or V
IL
IO
IH
V
IH
IO
=0mA CS 0.2V,
IO
, Read
=0mA, CS=V
=Vss to Vcc
-0.3
Min
3.0
2.7
2.2
0
Min
3)
IL,
-
-
Typ
3.3
3.0
0
-
-
CMOS SRAM
Min
Max
2.4
-1
-1
10
-
-
-
-
-
-
8
Vcc+0.3
Max
3.6
3.3
0.6
Typ
0
-
-
-
-
-
-
-
-
-
2)
Revision 2.01
October 2001
Max
15
0.4
0.3
45
1
1
4
6
-
Unit
1)
pF
pF
Unit
V
V
V
V
Unit
mA
mA
mA
mA
V
V
A
A
A