K6X4016C3F-B Samsung semiconductor, K6X4016C3F-B Datasheet - Page 3

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K6X4016C3F-B

Manufacturer Part Number
K6X4016C3F-B
Description
256Kx16 bit Low Power full CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet
PRODUCT LIST
ABSOLUTE MAXIMUM RATINGS
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
FUNCTIONAL DESCRIPTION
1. X means don t care. (Must be in low or high state)
K6X4016C3F Family
K6X4016C3F-TB55
K6X4016C3F-TB70
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CS
H
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
L
L
L
L
L
L
L
L
Part Name
Commercial Products(0~70 C)
OE
X
X
X
X
X
H
L
L
L
1)
1)
1)
1)
1)
Item
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
WE
X
X
H
H
H
H
L
L
L
1)
1)
Function
LB
X
X
H
H
H
L
L
L
L
1)
1)
K6X4016C3F-TF55
K6X4016C3F-TF70
UB
X
X
1)
H
H
H
L
L
L
L
Part Name
1)
1)
Industrial Products(-40~85 C)
V
Symbol
IN
T
V
P
,V
T
STG
CC
D
A
OUT
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
Dout
Dout
Din
Din
1~8
-0.5 to V
3
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
Function
CC
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
-0.3 to 7.0
-65 to 150
-40 to 125
-40 to 85
Dout
Dout
Ratings
Din
Din
+0.5V(max. 7.0V)
0 to 70
9~16
1.0
K6X4016C3F-TQ55
K6X4016C3F-TQ70
Lower Byte Read
Upper Byte Read
Lower Byte Write
Upper Byte Write
Automotive Products(-40~125 C)
Output Disabled
Output Disabled
Part Name
Word Read
Deselected
Word Write
Mode
Unit
W
V
V
C
C
CMOS SRAM
K6X4016C3F-Q
K6X4016C3F-B
K6X4016C3F-F
44-TSOP2-F, 55ns, L
44-TSOP2-F, 70ns, L
Remark
September 2003
Function
-
-
-
-
Revision 1.0
Standby
Power
Active
Active
Active
Active
Active
Active
Active
Active

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