K6X4016C3F-B

Manufacturer Part NumberK6X4016C3F-B
Description256Kx16 bit Low Power full CMOS Static RAM
ManufacturerSamsung semiconductor
K6X4016C3F-B datasheet
 


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K6X4016C3F Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
Address
Data Out
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2)
Address
CS
UB, LB
OE
Data out
High-Z
NOTES (READ CYCLE)
t
t
1.
and
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
HZ
OHZ
levels.
2. At any given temperature and voltage condition,
interconnection.
,
(Address Controlled
CS=OE=V
, WE=V
, UB or/and LB=V
IL
IH
t
RC
t
AA
t
OH
(WE=V
)
IH
t
RC
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
Data Valid
t
t
(Max.) is less than
(Min.) both for a given device and from device to device
HZ
LZ
6
CMOS SRAM
)
IL
Data Valid
t
OH
t
HZ
t
BHZ
t
OHZ
Revision 1.0
September 2003