28F640J3A Intel Corporation, 28F640J3A Datasheet

28F640J3A

Manufacturer Part Number

28F640J3A

Description

Manufacturer

Intel Corporation

Datasheets

1.28F128J3A.pdf (58 pages)

2.28F640J3A.pdf (68 pages)

Specifications of 28F640J3A

Package

BGA

Date_code

09+

Available stocks

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Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

28F640J3A120

Manufacturer:

INTEL

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

28F640J3A120

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AMI

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3 Volt Intel

28F128J3A, 28F640J3A, 28F320J3A (x8/x16)

Product Features

Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel

StrataFlash™ memory products provide 2X the bits in 1X the space, with new features for mainstream

performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring

reliable, two-bit-per-cell storage technology to the flash market segment.

Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,

support for code and data storage, and easy migration to future devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash

memory devices take advantage of over one billion units of manufacturing experience since 1987. As a

result, Intel StrataFlash components are ideal for code and data applications where high density and low

cost are required. Examples include networking, telecommunications, digital set top boxes, audio

recording, and digital imaging.

By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design

migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation

Intel StrataFlash memory (28F640J5 and 28F320J5) devices.

Intel StrataFlash memory components deliver a new generation of forward-compatible software support.

By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take

advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.

Manufactured on Intel

the highest levels of quality and reliability.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

High-Density Symmetrically-Blocked

Architecture

High Performance Interface Asynchronous

Page Mode Reads

2.7 V–3.6 V V

128-bit Protection Register

Enhanced Data Protection Features

Absolute Protection with V

— 128 128-Kbyte Erase Blocks (128 M)

— 4 128-Kbyte Erase Blocks (64 M)

— 32 128-Kbyte Erase Blocks (32 M)

— 110/25 ns Read Access Time (32 M)

— 120/25 ns Read Access Time (64 M)

— 150/25 ns Read Access Time (128 M)

— 64-bit Unique Device Identifier

— 64-bit User Programmable OTP Cells

— Flexible Block Locking

— Block Erase/Program Lockout during

Power Transitions

Operation

0.25 micron ETOX™ VI process technology, Intel StrataFlash memory provides

StrataFlash™ Memory

PEN

= GND

Packaging

Cross-Compatible Command Support Intel

Basic Command Set

32-Byte Write Buffer

12.8M Total Min. Erase Cycles (128 Mbit)

6.4M Total Min. Erase Cycles (64 Mbit)

3.2M Total Min. Erase Cycles (32 Mbit)

Automation Suspend Options

0.25 µ Intel

Technology

— 56-Lead TSOP Package

— 64-Ball Intel

— Common Flash Interface

— Scalable Command Set

— 6 µs per Byte Effective Programming

— 100K Minimum Erase Cycles per Block

— Block Erase Suspend to Read

— Block Erase Suspend to Program

— Program Suspend to Read

Time

Preliminary Datasheet

StrataFlash™ Memory

Easy BGA Package

Order Number: 290667-008

April 2001

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