GS864418E-133 GSI [GSI Technology], GS864418E-133 Datasheet

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GS864418E-133

Manufacturer Part Number
GS864418E-133
Description
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V or 2.5 V core power supply and I/O
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 165-bump BGA package available
Functional Description
Applications
The GS864418/36E-xxxV is a
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Rev: 1.05 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
75,497,472 -bit high performance
Through
Pipeline
3-1-1-1
2-1-1-1
Flow
72Mb S/DCD Sync Burst SRAMs
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
tCycle
tCycle
t
t
KQ
KQ
4M x 18, 2M x 36
Parameter Synopsis
1/32
-250 -225 -200 -166 -150 -133 Unit
385
450
265
290
3.0
4.0
6.5
6.5
360
415
265
290
3.0
4.4
6.5
6.5
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS864418/36E-xxxV is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS864418/36E-xxxV operates on a 1.8 V or 2.5 V power
supply. All inputs are 1.8 V and 2.5 V compatible. Separate output
power (V
internal circuits and are 1.8 V and 2.5 V compatible.
335
385
265
290
3.0
5.0
6.5
6.5
305
345
255
280
3.0
6.0
8.0
8.0
DDQ
) pins are used to decouple output noise from the
295
325
240
265
3.3
6.7
8.5
8.5
265
295
225
245
3.5
7.5
8.5
8.5
mA
mA
mA
mA
ns
ns
ns
ns
GS864418/36E-xxxV
© 2003, GSI Technology
250 MHz–133MHz
1.8 V or 2.5 V V
1.8 V or 2.5 V I/O
Preliminary
DD

Related parts for GS864418E-133

GS864418E-133 Summary of contents

Page 1

... DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. The user may configure this SRAM for either mode of operation using the SCD mode input. Byte Write and Global Write ...

Page 2

BGA—x18 Commom I/O—Top View (Package DDQ D NC DQB V DDQ E NC DQB V DDQ F NC DQB V DDQ G NC ...

Page 3

BGA—x36 Common I/O—Top View DQPC NC V DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G DQC DQC V ...

Page 4

GS864418/36E-xxxV 165-Bump BGA Pin Description Symbol Type I — ...

Page 5

Register A0– LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only x36 version shown for simplicity. Rev: 1.05 6/2006 Specifications ...

Page 6

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Single/Dual Cycle Deselect Control FLXDrive Output Impedance Control Note: There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ...

Page 7

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 8

Synchronous Truth Table Operation Address Used Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, ...

Page 9

Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B that ADSP is tied ...

Page 10

Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles ...

Page 11

Absolute Maximum Ratings (All voltages reference Symbol Voltage on V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 12

V & V Range Logic Levels DDQ2 DDQ1 Parameter V Input High Voltage DD V Input Low Voltage DD Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica- tions ...

Page 13

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 14

Rev: 1.05 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 14/32 Preliminary GS864418/36E-xxxV © 2003, GSI Technology ...

Page 15

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock ...

Page 16

Begin Read A Cont Single Read Single Read CK ADSP tS tH ADSC tS ADV tS tH A0– Ba– tOE DQa–DQd Rev: 1.05 6/2006 Specifications cited ...

Page 17

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tS tH ADV tS tH A0– Ba– and E3 only sampled with ADSC tOE ...

Page 18

Begin Read A Cont CK ADSP tS tH ADSC tS ADV tS tH Ao– Ba– tOE DQa–DQd Hi-Z Rev: 1.05 6/2006 Specifications cited are subject ...

Page 19

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tH tS ADV tS tH Ao– Ba– and E3 only sampled with ADSP and ADSC ...

Page 20

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 21

JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS input is sampled ...

Page 22

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 23

Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in ...

Page 24

SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into ...

Page 25

JTAG TAP Instruction Set Summary Instruction Code EXTEST 000 Places the Boundary Scan Register between TDI and TDO. IDCODE 001 Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between ...

Page 26

JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version) Parameter 1.8 V Test Port Input Low Voltage 2.5 V Test Port Input Low Voltage 1.8 V Test Port Input High Voltage 2.5 V Test Port Input High Voltage ...

Page 27

... TCK TDI TMS TDO Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time ...

Page 28

Package Dimensions—165-Bump FPBGA (Package E) A1 CORNER TOP VIEW SEATING PLANE C Rev: 1.05 ...

Page 29

... GS864436E-150 GS864436E-133 GS864418E-250I GS864418E-225I GS864418E-200I GS864418E-166I GS864418E-150I GS864418E-133I GS864436E-250I GS864436E-225I GS864436E-200I GS864436E-166I GS864436E-150I GS864436E-133I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB. ...

Page 30

... Ordering Information for GSI Synchronous Burst RAMs (Continued) 1 Org Part Number GS864418E-250 GS864418E-225V GS864418E-200V GS864418E-166V GS864418E-150V GS864418E-133V GS864436E-250V GS864436E-225V GS864436E-200V GS864436E-166V GS864436E-150V GS864436E-133V GS864418E-250IV GS864418E-225IV GS864418E-200IV ...

Page 31

... Ordering Information for GSI Synchronous Burst RAMs (Continued) 1 Org Part Number GS864418E-150IV GS864418E-133IV GS864436E-250IV GS864436E-225IV GS864436E-200IV GS864436E-166IV GS864436E-150IV GS864436E-133IV Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB. ...

Page 32

... Sync SRAM Data Sheet Revision History DS/DateRev. Code: Old; New 8644Vxx_r1 8644Vxx_r1; 8644Vxx_r1_01 8644Vxx_r1_01; 8644Vxx_r1_02 8644Vxx_r1_02; 8644Vxx_r1_03 8644Vxx_r1_03; 8644Vxx_r1_04 8644Vxx_r1_04; 8644xx_V_r1_05 Rev: 1.05 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Types of Changes Format or Content • ...

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