SPA11N60CFD_1012

Manufacturer Part NumberSPA11N60CFD_1012
DescriptionCoolMOS Power Transistor
ManufacturerINFINEON [Infineon Technologies AG]
SPA11N60CFD_1012 datasheet
 


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TM
CoolMOS
Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC
Type
Package
SPA11N60CFD
TO-220-3-31
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
1)
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
Power dissipation
Operating and storage temperature
Rev. 1.4
Ordering Code
SP000216317
Symbol Conditions
I
T
=25 °C
D
C
T
=100 °C
C
I
T
=25 °C
D,pulse
C
E
I
=5.5 A, V
AS
D
DD
2),3)
E
I
=11 A, V
AR
D
DD
2),3)
I
AR
I
=11 A, V
D
DS
dv /dt
T
=125 °C
j
dv /dt
I
=11 A, V
S
DS
T
=125 °C
j
di /dt
V
static
GS
AC (f >1 Hz)
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
SPA11N60CFD
Product Summary
V
DS
R
DS(on),max
1)
I
D
PG-TO220-3-31
0)
Marking
11N60CFD
Value
11
7
28
=50 V
340
=50 V
0.6
11
=480 V,
80
40
=480 V,
600
±20
±30
33
-55 ... 150
600
V
0.44
11
A
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
2010-12-21

SPA11N60CFD_1012 Summary of contents

  • Page 1

    TM CoolMOS Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche ...

  • Page 2

    Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wave soldering T Electrical characteristics Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy 4) related Effective output capacitance, time 5) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate ...

  • Page 4

    Parameter Reverse Diode Diode continuous forward current 2) Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Typical Transient Thermal Characteristics Symbol Value typ. R 0.0178 th1 R 0.0931 th2 R 0.228 th3 ...

  • Page 5

    Power dissipation P =f(T ) tot Max. transient thermal impedance I =f =25 ° parameter: D 0.5 0 ...

  • Page 6

    Typ. output characteristics I =f =150 ° parameter 10µ Drain-source on-state resistance R =f DS(on) j ...

  • Page 7

    Typ. gate charge V =f =11 A pulsed GS gate D parameter Avalanche SOA I =f parameter: T j(start ...

  • Page 8

    Drain-source breakdown voltage V =f =10 mA BR(DSS 700 660 620 580 540 -60 - Typ. C stored energy oss E = f(V ) oss ...

  • Page 9

    Typ. reverse recovery charge Q =f(I ); parameter: di/ dt =100 A/µ 1.2 1 0.8 0.6 125 °C 0.4 25 °C 0 Rev. 1.4 18 Typ. reverse recovery charge Q =f(di /dt ); parameter: I ...

  • Page 10

    Definition of diode switching characteristics Rev. 1.4 page 10 SPA11N60CFD 2010-12-21 ...

  • Page 11

    PG-TO-220-3-31 (FullPAK) Rev. 1.4 page 11 SPA11N60CFD 2010-12-21 ...

  • Page 12

    Published by Infineon Technologies AG D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights ...