K9F5608U0B-YCB0 SAMSUNG [Samsung semiconductor], K9F5608U0B-YCB0 Datasheet - Page 19

• Manufacturer Part Number: K9F5608U0B-YCB0
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’ t-care.
CLE
CE
WE
ALE
Figure 7. Read Operation with CE don’ t-care.
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR
t
CH
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
t
R
Data Input
19
I/O
CE
RE
0
~
15
CE don’ t-care
CE don’ t-care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10h