K9F5608U0B-YCB0 SAMSUNG [Samsung semiconductor], K9F5608U0B-YCB0 Datasheet - Page 28

• Manufacturer Part Number: K9F5608U0B-YCB0
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
R/B
I/Ox
RE
CLE
CE
WE
ALE
R/B
I/Ox
Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation (only for K9F5608U0B-Y,P and K9F5608U0B-V,F Valid with in a block )
Block
X16 device : A
X8 device : A
00h
01h
1st half array
(GND input=L, 00h Command)
50h
3
4
~ A
~ A
Data Field
X16 device : A
7
X8 device : A
7
are "L"
Don’ t care
Start Add.(3Cycle)
A
Start Add.(3Cycle)
0
~ A
2nd half array
7
& A
0
0
9
Spare Field
~ A
~ A
~ A
2
3
24
& A
& A
9
9
1st
2nd
Nth
~ A
~ A
t
R
24
24
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
t
R
1st half array
Data Field
Data Output
(GND input=L, 01h Command)
Main array
1st
Data Field
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
28
low during tR
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
1st half array
(GND input=H, 00h Command)
FLASH MEMORY
t
Data Field
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth