K9F5608U0B-YCB0 SAMSUNG [Samsung semiconductor], K9F5608U0B-YCB0 Datasheet - Page 34

• Manufacturer Part Number: K9F5608U0B-YCB0
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
Data Protection & Powerup sequence
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. WP pin provides hardware protection and is recommended to be kept at
V
mand sequences as shown in Figure 16. The two step command sequence for program/erase provides additional software protec-
tion.
Figure 16. AC Waveforms for Power Transition
IL
WP
WE
V
during power-up and power-down and recovery time of minimum 10 s is required before internal circuit gets ready for any com-
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10 s
High
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
34
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V