K9F5608U0B-YCB0 SAMSUNG [Samsung semiconductor], K9F5608U0B-YCB0 Datasheet - Page 21

• Manufacturer Part Number: K9F5608U0B-YCB0
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
ALE
* Input Data Latch Cycle
CLE
CE
WE
CE
RE
R/B
I/Ox
I/Ox
* Serial access Cycle after Read
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
t
WC
This parameter is sampled and not 100% tested.
REA
t
DH
t
t
RP
WH
(CLE=L, WE=H, ALE=L)
Dout
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
21
t
DH
Dout
t
RHZ*
t
WP
t
DIN n
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
CHZ*
RHZ*
t
OH
t
OH