K9F5608U0B-YCB0 SAMSUNG [Samsung semiconductor], K9F5608U0B-YCB0 Datasheet - Page 22

• Manufacturer Part Number: K9F5608U0B-YCB0
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
READ1 OPERATION
CLE
CE
WE
RE
I/Ox
CLE
CE
WE
ALE
RE
R/B
* Status Read Cycle
I/Ox
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
t
Read
WC
CMD
N Address
A0~A7
Column
Address
(READ ONE PAGE)
A9~A16
t
Page(Row)
Address
CLS
t
CS
A17~A24
t
WP
t
DS
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
70h
t
WB
Busy
t
t
RR
R
t
t
t
CH
DH
CLH
t
AR
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR
Dout N
NOTES : 1) is only valid
22
t
WHR
Dout N+1
t
CLR
t
RC
t
IR
Dout N+2
t
CEA
t
REA
on K9F5608U0B_Y,P or K9F5608U0B_V,F
Dout N+3
Status Output
FLASH MEMORY
t
t
t
RHZ
t
CHZ
OH
OH
1)
Dout m
1)
t
RHZ
t
OH
t
RB
t
t
CHZ
OH
t
CEH
t
CRY