STF20NM50D STMICROELECTRONICS [STMicroelectronics], STF20NM50D Datasheet - Page 2

• Manufacturer Part Number: STF20NM50D
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STP20NM50FD - STF20NM50D - STB20NM50FD
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Rthj-case
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
Symbol
SD
R
I
V
(BR)DSS
V
DM
P
V
I
I
DS(on)
V
V
E
T
I
DSS
GSS
GS(th
DGR
TOT
AR
I
I
T
T
ISO
stg
DS
GS
AS
D
D
20A, di/dt
l
j
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
200 A/µs, V
Parameter
j
DS
= 25 °C, I
DD
= 0)
GS
V
(BR)DSS
= 0)
Parameter
Parameter
D
C
GS
= I
= 25°C
GS
j
, T
= 20 k )
AR
max)
j
= 0)
, V
I
V
V
V
V
V
D
T
DS
DS
GS
DS
GS
JMAX.
DD
= 250 µA, V
C
C
= Max Rating
= Max Rating, T
= V
= ±30V
= 10V, I
= 25°C
= 100°C
= 35 V)
Test Conditions
GS
, I
D
D
= 10A
GS
= 250 µA
= 0
Max
Max
C
= 125 °C
TO-220 / D
STP20NM50FD
STB20NM50FD
0.65
192
1.2
20
14
80
--
Min.
500
3
2
PAK
–65 to 150
Max Value
Value
500
500
±30
150
62.5
700
300
20
10
Typ.
0.22
4
STF20NM50D
TO-220FP
20 (*)
14 (*)
80 (*)
2000
0.36
2.8
45
Max.
±100
0.25
10
1
5
W/°C
Unit
V/ns
Unit
Unit
°C/W
°C/W
mJ
µA
µA
nA
°C
°C
W
V
V
V
A
A
A
V
°C
A
V
V