STF20NM50D STMICROELECTRONICS [STMicroelectronics], STF20NM50D Datasheet - Page 3

• Manufacturer Part Number: STF20NM50D
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) C
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
SDM
g
oss eq.
t
t
I
C
SD
C
C
r(Voff)
d(on)
Q
Q
fs
RRM
I
2. Pulse width limited by safe operating area.
Q
R
Q
SD
t
oss
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
g
g
rr
(1)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
V
I
V
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
DS
GS
DD
DD
GS
DD
DD
G
G
DS
= 10A
= 4.7
= 4.7
= 20 A, V
= 20 A, di/dt = 100A/µs,
> I
= 0V, V
= 250V, I
= 400V, I
= 10V
= 400V, I
= 60V, T
= 25V, f = 1 MHz, V
STP20NM50FD - STF20NM50D - STB20NM50FD
Test Conditions
Test Conditions
D(on)
Test Conditions
Test Conditions
V
V
DS
x R
GS
GS
j
GS
D
D
D
= 150°C
= 0V to 400V
= 10 A
= 20A,
DS(on)max,
= 20 A,
= 10V
= 10V
= 0
GS
= 0
oss
Min.
Min.
Min.
Min.
when V
DS
Typ.
Typ.
245
increases from 0 to 80% V
1380
Typ.
Typ.
16
15
30
290
130
2.8
2
6
40
22
20
38
18
10
9
Max.
Max.
Max.
Max.
1.5
20
80
53
Unit
Unit
Unit
Unit
µC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
pF
ns
ns
A
A
V
A
S
3/11
DSS
.