CM75DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_11 Datasheet

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CM75DY-34A_11

Manufacturer Part Number
CM75DY-34A_11
Description
HIGH POWER SWITCHING USE INSULATED TYPE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
< IGBT MODULES >
CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
Publication Date : June.2011
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dual (Half-Bridge)
Tolerance otherwise specified
Division of Dimension
over
over
over 30
over 120
0.5
3
6
to
to
to 30
to 120
to 400
Collector current I
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
3
6
±0.2
±0.3
±0.5
±0.8
±1.2
Tolerance
1
C2E1
C
Tr2
.............….......................…
Di2
INTERNAL CONNECTION
CES
......................… 1 7 0 0 V
E2
j m a x
..............
Di1
Tr1
Dimension in mm
1 5 0 °C
C1
7 5 A

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CM75DY-34A_11 Summary of contents

Page 1

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Dual (Half-Bridge) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Publication Date : June.2011 Collector current I .............….......................… C Collector-emitter voltage V Maximum junction temperature T ●Flat base Type ●Copper base plate ● ...

Page 2

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (T Symbol Item V Collector-emitter voltage CES V Gate-emitter voltage GES I C Collector current I CRM P Total power dissipation (Note. Emitter current (Note.1) I ERM T Junction temperature j T Storage temperature ...

Page 3

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Case temperature (T ) and heat sink temperature (T C the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. ...

Page 4

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS Es1 V C2E1 Short- V circuited G2 E2 Es2 Tr1 V test circuit Load - Switching characteristics test circuit and waveforms ...

Page 5

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) T =25 °C j 150 V = 100 COLLECTOR-EMITTER VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T =25 ° GATE-EMITTER VOLTAGE V Publication Date : June.2011 ...

Page 6

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =1000 V, V =± =125 °C, INDUCTIVE LOAD j 1000 100 COLLECTOR CURRENT I HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =1000 V, V =± ...

Page 7

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T 100 10 1 0.1 0.01 0.1 1 COLLECTOR-EMITTER VOLTAGE V GATE CHARGE CHARACTERISTICS (TYPICAL 100 200 300 GATE CHARGE Q Publication Date : June.2011 =25 ° ...

Page 8

... IGBT MODULES > CM75DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage ...

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