CM75DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_11 Datasheet - Page 2

• Manufacturer Part Number: CM75DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
THERMAL RESISTANCE CHARACTERISTICS
MECHANICAL CHARACTERISTICS
V
V
I
I
P
I
I
T
T
V
I
I
V
V
C
C
C
Q
t
t
t
t
V
t
Q
E
E
E
r
R
R
R
M
M
m
e
C
CRM
E
ERM
C E S
G E S
r r
d ( o n )
r
d ( o f f )
f
g
CES
GES
EC
c
j
s t g
G E ( t h )
C E s a t
o n
o f f
r r
t o t
i s o l
i e s
o e s
r e s
G
r r
t h ( j - c ) Q
t h ( j - c ) D
t h ( c - s )
t
s
Symbol
Symbol
Symbol
Symbol
(Note.1)
(Note.1)
(Note.1)
(Note.1)
(Note.1)
(Note.1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Junction temperature
Storage temperature
Isolation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
Thermal resistance
Contact thermal resistance
Mounting torque
Weight
Flatness of base plate
Item
Item
Item
Item
(Note.2)
j
=25 °C, unless otherwise specified)
j
=25 °C, unless otherwise specified)
(Note.2)
T
-
I
V
-
G-E short-circuited
C-E short-circuited
DC, T
Pulse, Repetitive
T
Pulse, Repetitive
-
Terminals to base plate, RMS, f=60 Hz, AC 1 min
V
V
I
V
V
V
V
R
I
V
R
V
Inductive load
Per switch, T
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied
Main terminals
Mounting to heat sink
On the centerline X, Y
C
C
E
C
C
CE
GE
=7.5 mA, V
=75 A
GE
CE
CC
CC
G
=75 A
CC
G
CC
GE
=25 °C
=25 °C
=6.4 Ω, Inductive load
=6.4 Ω, Inductive load
=V
=10 V, G-E short-circuited
=V
=15 V
=1000 V, I
=1000 V, I
=1000 V, I
=1000 V, I
=±15 V, R
C
CES
GES
=111 °C
, G-E short-circuited
, C-E short-circuited
(Note.5)
(Note.5)
(Note.2, 4)
(Note.2, 4)
CE
c
G
C
C
E
C
=25 °C
=75 A, V
=6.4 Ω, T
2
=75 A, V
=75 A, V
=I
=10 V
,
, G-E short-circuited
E
(Note.2, 4)
=75 A,
Conditions
Conditions
Conditions
(Note.3)
(Note.3)
GE
GE
GE
Conditions
j
(Note.7)
=125 °C,
=15 V
=±15 V,
=±15 V,
(Note.6)
M 5 screw
M 6 screw
T
T
j
=125 °C
j
=25 °C
-100
Min.
Min.
Min.
5.5
2.5
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Limits
Limits
0.022
Typ.
2.45
15.9
22.5
24.8
Typ.
Typ.
500
310
7.5
7.0
2.2
2.3
3.0
4.0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-40 ~ +150
-40 ~ +125
Rating
1700
3500
150
780
150
±20
75
75
+100
Max.
Max.
Max.
18.5
0.16
0.29
200
150
550
350
300
1.0
2.0
8.5
2.8
2.1
0.4
3.0
3.5
4.5
-
-
-
-
-
-
-
-
-
K/kW
K/W
K/W
Unit
Unit
Unit
Unit
N·m
N·m
mA
nC
μC
mJ
mJ
μm
°C
μA
nF
ns
ns
W
V
Ω
V
V
A
A
V
V
V
g