CM75DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_11 Datasheet - Page 6

• Manufacturer Part Number: CM75DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
PERFORMANCE CURVES
1000
100
100
10
10
1
1
1
1
V
CC
=1000 V, V
SWITCHING CHARACTERISTICS
V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT I
COLLECTOR CURRENT I
INDUCTIVE LOAD, PER PULSE
CC
T
EMITTER CURRENT I
=1000 V, V
j
=125 °C, INDUCTIVE LOAD
GE
t
E
HALF-BRIDGE
HALF-BRIDGE
d ( o n )
=±15 V, R
o f f
(TYPICAL)
(TYPICAL)
t
r
GE
=±15 V, R
10
10
t
G
d ( o f f )
=6.4 Ω, T
G
E
=6.4 Ω,
(A)
C
C
(A)
(A)
E
j
E
=125 °C
o n
r r
t
f
100
100
6
1000
1000
100
100
10
10
1
1
V
CC
EXTERNAL GATE RESISTANCE R
EXTERNAL GATE RESISTANCE R
=1000 V, I
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
INDUCTIVE LOAD, PER PULSE
T
CC
j
=125 °C, INDUCTIVE LOAD
=1000 V, I
t
t
d ( o f f )
d ( o n )
C
/I
t
HALF-BRIDGE
t
HALF-BRIDGE
f
r
E
=75 A, V
(TYPICAL)
(TYPICAL)
C
=75 A, V
10
10
GE
=±15 V, T
GE
=±15 V,
j
=125 °C
G
G
(Ω)
(Ω)
E
E
E
o n
o f f
r r
100
100