CM75DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_11 Datasheet - Page 7

• Manufacturer Part Number: CM75DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
PERFORMANCE CURVES
0.01
20
15
10
100
0.1
5
0
10
1
0
0.1
COLLECTOR-EMITTER VOLTAGE V
100
GATE CHARGE CHARACTERISTICS
CAPACITANCE CHARACTERISTICS
G-E short-circuited, T
GATE CHARGE Q
200
I
C
1
=75 A, T
(TYPICAL)
(TYPICAL)
300
V
j
=25 °C
CC
400
=1000 V
j
G
=25 °C
(nC)
10
500
V
CC
=800 V
CE
600
(V)
C
C
C
i e s
o e s
r e s
100
700
7
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1000
0.001
0.01
100
0.1
10
0.00001
1
1
REVERSE RECOVERY CHARACTERISTICS
R
0.0001
V
t h ( j - c ) Q
CC
T
EMITTER CURRENT I
=1000 V, V
FREE WHEELING DIODE
j
=25 °C, INDUCTIVE LOAD
Single pulse, T
=0.16 K/W, R
0.001
(MAXIMUM)
(TYPICAL)
TIME (S)
GE
=±15 V, R
0.01
10
t h ( j - c ) D
C
=25°C
=0.29 K/W
0.1
G
E
=6.4 Ω,
(A)
I
t
r r
r r
1
10
100