K6X1008C2D-BF55T00 Samsung, K6X1008C2D-BF55T00 Datasheet - Page 4

• Manufacturer Part Number: K6X1008C2D-BF55T00
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos
• Manufacturer: Samsung

RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
K6X1008C2D Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Industrial Product: T
Automotive Product: T
Item
Item
Item
A
=-40 to 85°C, Otherwise specified
A
1
A
=-40 to 125°C, Otherwise specified
)
=0 to 70°C, Otherwise specified
(f=1MHz, TA=25°C)
Symbol
I
I
V
V
I
I
I
I
CC1
CC2
SB1
I
CC
LO
SB
LI
OH
OL
V
CS
I
Cycle time=1µs, 100%duty, I
V
Cycle time=Min, 100% duty, I
V
I
I
CS
CS
CS
Symbol
IO
OL
OH
IN
IN
IN
=0mA, CS
C
C
=2.1mA
1
1
1
2
=Vss to Vcc
≤0.2V or V
=V
=-1.0mA
=V
=V
≥Vcc-0.2V, CS
≤0.2V, Other inputs=0~Vcc
IN
IO
IH
IH
IH
Symbol
or V
, CS2=V
Vcc
Vss
or CS
V
V
IH
IL
IL
1
=V
IN
2
≥V
=V
IL
IL
, CS
CC
, Other inputs=V
2
IL
≥Vcc-0.2V or
or OE=V
-0.2V
2
Test Condition
4
=V
Test Conditions
IH,
V
V
1)
-0.5
IN
IO
V
IO
Min
IO
4.5
2.2
IH
=0V
=0V
IN
0
=0mA, CS
=0mA, CS
or WE=V
=V
3)
IH
IH
or V
or V
IL
1
IL
1
IL
≤0.2V, CS
=V
, V
, Read
IO
IL
K6X1008C2D-Q
, CS
K6X1008C2D-B
K6X1008C2D-F
=Vss to Vcc
Typ
5.0
0
-
-
2
=V
2
Min
≥Vcc-0.2V,
-
-
IH,
Vcc+0.5
CMOS SRAM
Max
5.5
0.8
Max
0
Min Typ Max Unit
2.4
10
-1
-1
8
-
-
-
-
-
-
-
-
2)
-
-
-
-
-
-
-
-
-
-
-
Revision 3.0
March 2005
0.4
0.4
25
10
15
50
1
1
5
7
-
Unit
Unit
pF
pF
V
V
V
V
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V