K6X1008C2D-BF55T00 Samsung, K6X1008C2D-BF55T00 Datasheet - Page 5

• Manufacturer Part Number: K6X1008C2D-BF55T00
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos
• Manufacturer: Samsung

AC CHARACTERISTICS
(V
1. The parameter is tested with 50pF test load. Commercial & Industrial Products only.
DATA RETENTION CHARACTERISTICS
1. CS
K6X1008C2D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
CC
=4.5~5.5V, Commercial product: T
1
≥Vcc-0.2V
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Item
,
CS
2
≥V
CC
( Test Load and Input/Output Reference)
C
-0.2V, or CS
Parameter List
L
=50pF+1TTL
L
=100pF+1TTL
2
Symbol
≤0.2V
t
t
V
I
RDR
SDR
DR
DR
A
=0 to 70°C, Industrial product: T
CS
Vcc=3.0V, CS
See data retention waveform
1
≥Vcc-0.2V
1
1)
≥Vcc-0.2V
5
Test Condition
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
1)
t
t
t
t
OHZ
t
t
t
OLZ
WC
CW
WP
WR
DW
OW
RC
CO
OE
OH
AW
DH
A
AA
HZ
AS
LZ
=-40 to 85°C, Automotive product: T
1. Including scope and jig capacitance
K6X1008C2D-Q
K6X1008C2D-B
K6X1008C2D-F
C
Min
55
10
10
55
45
45
40
20
L
5
0
0
0
0
0
0
5
-
-
-
1)
55ns
1)
Max
Speed Bins
55
55
25
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
-
-
Min
CMOS SRAM
70
10
10
70
60
60
50
25
5
0
0
0
0
0
0
5
-
-
-
70ns
Typ
A
-
-
-
-
-
-
=-40~125°C
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5.5
Revision 3.0
10
10
25
March 2005
-
-
Units
)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µA
µA
µA
ms
V