K6X1008C2D-BF55T00 Samsung, K6X1008C2D-BF55T00 Datasheet - Page 6

• Manufacturer Part Number: K6X1008C2D-BF55T00
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos
• Manufacturer: Samsung

K6X1008C2D Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
CS
OE
Data out
t
HZ
levels.
interconnection.
1
2
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
(Address Controlled
t
(WE=V
HZ
OH
(Max.) is less than
t
AA
t
t
CO2
CO1
IH
t
)
OE
t
AA
6
,
t
CS1=OE=V
RC
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, CS2=WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
HZ(1,2)
CMOS SRAM
Revision 3.0
March 2005