STM32L151RBH6TR STMicroelectronics, STM32L151RBH6TR Datasheet - Page 75

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STM32L151RBH6TR

Manufacturer Part Number
STM32L151RBH6TR
Description
ARM Microcontrollers - MCU 32-Bit ARM Cortex 128kb Low Power MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32L151RBH6TR

Product Category
ARM Microcontrollers - MCU
Rohs
yes
Core
ARM Cortex M3
Data Bus Width
32 bit

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STM32L151x6/8/B, STM32L152x6/8/B
6.3.9
Table 36.
1. Based on characterization not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 37.
V
V
Symbol
Symbol
N
t
FESD
EFTB
RET
CYC
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
(2)
(2)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Cycling (erase / write )
Program memory
Cycling (erase / write )
EEPROM data memory
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Flash memory, data EEPROM endurance and data retention
EMS characteristics
Parameter
A
A
Parameter
= 85 °C
= 105 °C
Table
A
A
Doc ID 17659 Rev 8
= 85 °C
= 105 °C
37. They are based on the EMS levels and classes
DD
and V
SS
T
105 °C
T
T
A
RET
RET
= -40°C to
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
Conditions
HCLK
HCLK
DD
DD
= +85 °C
= +105 °C
= 3.3 V, LQFP100, T
= 3.3 V, LQFP100, T
= 32 MHz
= 32 MHz
Conditions
Electrical characteristics
Min
300
30
30
10
10
10
(1)
Value
A
A
Typ Max
= +25 °C,
= +25 °C,
DD
kcycles
and
years
Level/
Unit
Class
75/121
2B
4A

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