IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 15

IC DDR SDRAM 256MBIT 66TSOP

IS43R16160B-5TL

Manufacturer Part Number
IS43R16160B-5TL
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS43R16160B-5TL

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
16 bit
Maximum Clock Frequency
200 MHz
Access Time
0.7 ns
Supply Voltage (max)
2.7 V
Supply Voltage (min)
2.3 V
Maximum Operating Current
290 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
706-1085
IS43R16160B-5TL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS43R16160B-5TLI
Manufacturer:
TI
Quantity:
157
Part Number:
IS43R16160B-5TLI
Manufacturer:
ISSI
Quantity:
20 000
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
DDR SDRAM (Rev.1.1)
10/31/08
POWER ON SEQUENCE
SDRAM from damaged or multifunctioning.
1. Apply VDD before or the same time as VDDQ
2. Apply VDDQ before or at the same time as VTT & Vref
3. Maintain stable condition for 200us after stable power and CLK, apply NOP or DSEL
4. Issue precharge command for all banks of the device
5. Issue EMRS
6. Issue MRS for the Mode Register and to reset the DLL
7. Issue 2 or more Auto Refresh commands
8. Maintain stable condition for 200 cycle
After these sequence, the DDR SDRAM is idle state and ready for normal operation.
MODE REGISTER
programmed by setting the mode register (MRS). The mode
register stores these data until the next MRS command, which
may be issued when all banks are in idle state. After tMRD from a
MRS command, the DDR SDRAM is ready for new command.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Before starting normal operation, the following power on sequence is necessary to prevent a
Burst Length, Burst Type and /CAS Latency can be
0
DLL Reset
0
0
Latency
Mode
0
0
1
0
Preliminary
Preliminary
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
CL
0
DR
YES
NO
/CAS Latency
0
2.5
R
R
R
R
R
2
3
LTMODE
256M Double Data Rate Synchronous DRAM
BT
Length
Burst
Burst Type
BL
Zentel Electronics Corporation
R: Reserved for Future Use
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BL
A3S56D30/40ETP
A12-A0
CLK
/CLK
/CS
/RAS
/CAS
/WE
BA0
BA1
0
1
BT=0
R
R
R
R
R
2
4
8
Interleaved
Sequential
V
BT=1
R
R
R
R
R
2
4
8
15

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