STPS30H100CTN STMicroelectronics, STPS30H100CTN Datasheet - Page 2

• Manufacturer Part Number: STPS30H100CTN
• Description: Schottky Diodes & Rectifiers Hi Vltg pwr Schottky 2x15A 100V 0.67VF
• Manufacturer: STMicroelectronics

Specifications of STPS30H100CTN

• Rohs: yes

Characteristics
1
2/10
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.54 x I
Symbol
Symbol
T
R
Symbol
R
I
V
j
I
V
F(RMS)
I
P
dV/dt
(diode 1) = P(diode1) x R
th(j-c)
I
R
I
I
dPtot
---------------
th(c)
F(AV)
T
F
RRM
RSM
FSM
RRM
ARM
dTj
(1)
T
(2)
stg
j
------------------------- -
Rth j a
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
F(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current t
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Operating junction temperature range
Critical rate of rise of reverse voltage
1
p
p
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
–
= 5 ms,
= 380 µs,
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0086 I
Parameter
< 2%
< 2%
F
2
th(j-c)
(RMS)
Doc ID 6347 Rev 8
(Per diode) + P(diode 2) x R
Parameter
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
(1)
T
t
t
t
p
p
p
p
c
= 0.5
= 10 ms sinusoidal
= 2 µs square, F= 1 kHz
= 100 µs square
= 1 µs T
= 155 °C
V
I
I
F
F
R
= 15 A
= 30 A
= V
Per diode
Total
j
RRM
= 25 °C
Per diode
Per device
th(c)
Min.
-65 to + 175
-40 to +175
Typ.
0.64
0.74
2
10000
10800
Value
Value
100
250
1.6
0.9
0.1
30
15
30
STPS30H100C
1
3
Max.
0.80
0.67
0.93
0.8
5
6
°C/W
V/µs
Unit
Unit
Unit
°C
°C
W
mA
V
A
A
A
A
A
µA
V