STPS30H100CTN STMicroelectronics, STPS30H100CTN Datasheet - Page 3

• Manufacturer Part Number: STPS30H100CTN
• Description: Schottky Diodes & Rectifiers Hi Vltg pwr Schottky 2x15A 100V 0.67VF
• Manufacturer: STMicroelectronics

Specifications of STPS30H100CTN

• Rohs: yes

STPS30H100C
Figure 1.
Figure 3.
Figure 5.
240
220
200
180
160
140
120
100
14
12
10
80
60
40
20
8
6
4
2
0
1E-3
0.001
0
0.01
0
P
0.1
I (A)
M
F(AV)
1
0.01
P
P
I
ARM
M
ARM
2
(W)
(1 µs)
(t p )
=0.5
t
4
= 0.05
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
6
1E-2
= 0.1
8
1
I
F(AV)
t (µs)
p
= 0.2
10
t(s)
(A)
10
12
1E-1
= 0.5
14
100
16
=tp/T
= 1
Doc ID 6347 Rev 8
T
18
T =150°C
T =25°C
T =75°C
a
a
a
1000
tp
1E+0
20
Figure 2.
Figure 4.
Figure 6.
18
16
14
10
1.0
0.8
0.6
0.4
0.2
0.0
12
8
6
4
2
0
1E-4
0
1.2
0.8
0.6
0.4
0.2
I
F(AV)
Z
1
0
th(j-c)
Single pulse
25
P
= 0.5
= 0.2
= 0.1
=tp/T
ARM
P
(A)
ARM
/R
25
R
(25 °C)
th(j-a)
th(j-c)
T
(T j )
=15°C/W
Average forward current versus
ambient temperature ( = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-3
tp
50
50
75
75
T
t (s)
R
amb
T (°C)
1E-2
p
th(j-a)
j
=R
(°C)
th(j-c)
100
100
125
Characteristics
1E-1
125
=tp/T
150
T
tp
150
1E+0
3/10
175