NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 2

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTIC
DYNAMIC CHARACTERISTIC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
DIODE CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Forward voltage
THERMAL CHARACTERISTICS
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Parameter
Rating
(T
J
= 25°C unless otherwise specified)
V
V
V
GE
V
V
CE
GE
CE
GE
= 0 V, V
= 600 V, I
V
= 15 V, I
= 20 V, V
V
V
V
V
= 0 V, I
V
GE
V
GE
V
GE
CC
CC
GE
GE
GE
Test Conditions
V
V
= 0 V, V
= V
= 0 V, I
= 600 V, I
GE
= 600 V, I
GE
= 20 V, V
http://onsemi.com
= 15 V, I
CE
T
= 0 V, I
R
R
T
F
J
C
CE
C
J
g
g
= 0 V/ 15 V
= 0 V/ 15 V
GE
= 125°C
= 20 A, T
= 1200 V, T
= 20 A, T
= 25°C
= 10 W
= 10 W
= 20 A, V
, I
CE
C
= 0 V, f = 1 MHz
C
F
C
= 500 mA
= 250 mA
CE
C
C
= 1200 V
= 20 A
= 20 A
2
= 20 A
= 20 A
= 0 V
J
J
GE
= 150°C
= 150°C
J =
= 15 V
Symbol
150°C
R
R
R
qJC
qJC
qJA
V
Symbol
V
V
(BR)CES
t
t
t
t
I
I
C
C
GE(th)
C
Q
Q
d(on)
d(on)
CEsat
d(off)
E
E
d(off)
E
E
CES
GES
Q
V
oes
t
t
t
t
ies
res
on
off
on
off
ge
gc
r
r
f
f
F
g
Value
0.65
1200
Min
1.5
4.5
40
−
−
−
−
−
−
−
−
4700
1.80
1.55
1.65
Typ
155
100
200
235
180
235
250
2.0
5.5
3.1
0.7
3.9
1.3
36
98
86
26
84
26
−
−
−
−
Max
1.75
100
2.2
6.5
0.5
2.0
−
−
−
−
−
°C/W
°C/W
°C/W
Unit
Unit
mA
nC
mJ
mJ
nA
pF
ns
ns
V
V
V
V