NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 4

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
1
1
0
8
0
V
V
T
R
Figure 9. Switching Time vs. Temperature
12
V
V
I
R
J
CE
GE
G
C
20
CE
GE
= 150°C
G
= 10 W
= 20 A
= 600 V
= 15 V
= 10 W
16
= 600 V
= 15 V
Figure 11. Switching Time vs. I
T
50
Figure 7. Typical Gate Charge
J
, JUNCTION TEMPERATURE (°C)
I
t
t
C
40
d(on)
d(off)
20
, COLLECTOR CURRENT (A)
t
t
r
f
Q
G
, GATE CHARGE (nC)
24
60
100
28
400 V
80
32
150
100
36
200 V
TYPICAL CHARACTERISTICS
40
120
600 V
200
44
C
140
http://onsemi.com
t
t
48
d(off)
d(on)
t
t
f
r
250
160
52
4
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
8
5
V
V
T
R
12
J
CE
GE
G
Figure 8. Energy Loss vs. Temperature
20
= 150°C
15
= 10 W
= 600 V
= 15 V
E
E
E
E
16
T
on
off
on
off
Figure 12. Energy Loss vs. R
Figure 10. Energy Loss vs. I
J
, JUNCTION TEMPERATURE (°C)
I
40
C
25
20
, COLLECTOR CURRENT (A)
R
G
, GATE RESISTOR (W)
24
60
35
28
45
80
32
100
55
36
40
120
65
V
V
I
T
V
V
I
R
C
C
J
CE
GE
CE
GE
G
C
E
= 20 A
= 20 A
E
= 150°C
G
44
= 10 W
on
off
= 600 V
= 15 V
= 600 V
= 15 V
140
75
48
160
85
52