NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 9

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

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0.63 (0.025)
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NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
Y14.5M, 1982.
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DIM
G
Q
W
A
B
C
D
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P
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PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
20.32
15.75
19.81
MILLIMETERS
MIN
4.70
1.00
1.90
1.65
1.50
0.40
5.40
4.32
3.55
2.87
---
5.45 BSC
6.15 BSC
21.08
16.26
20.83
MAX
5.30
1.40
2.60
2.13
2.49
0.80
6.20
5.49
4.50
3.65
3.12
NGTB20N120L/D
0.800
0.620
0.185
0.040
0.075
0.065
0.059
0.016
0.780
0.212
0.170
0.140
0.113
MIN
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0.215 BSC
0.242 BSC
INCHES
0.640
0.209
0.055
0.102
0.084
0.098
0.031
0.820
0.244
0.216
0.177
0.144
0.123
MAX
8.30