NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 6

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

0.001
0.001
0.01
0.01
0.000001
0.1
0.1
10
1
1
0.000001
20%
10%
5%
2%
1%
50% Duty Cycle
20%
10%
50% Duty Cycle
5%
2%
1%
Single Pulse
Single Pulse
0.00001
0.00001
0.0001
0.0001
Figure 20. Test Circuit for Switching Characteristics
Figure 19. Diode Transient Thermal Impedance
Figure 18. IGBT Transient Thermal Impedance
TYPICAL CHARACTERISTICS
0.001
0.001
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C
Junction
i
PULSE TIME (sec)
= t
PULSE TIME (sec)
0.01
i
0.01
/R
C
i
i
Junction
= t
6
i
/R
R
C
1
1
i
R
C
1
1
R
C
0.1
0.1
2
2
R
C
2
2
Duty Factor = t
Peak T
Duty Factor = t
Peak T
1
J
1
= P
R
R
DM
J
qJC
qJC
= P
1
x Z
/t
= 1.5
R
C
= 0.65
R
2
C
DM
n
n
n
qJC
n
1
10
10
x Z
/t
Case
2
+ T
Case
qJC
C
+ T
0.06231
0.10246
0.02659
R
0.2121
0.1057
R
C
0.19655
0.414
0.5
0.345
0.0934
i
i
(°C/W)
(°C/W)
100
100
1.76E−4
1.0E−4
0.002
1.48E−4
0.002
0.03
0.1
2.0
t
i
t
2.0
0.1
(sec)
i
(sec)
1000
1000