NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 3

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

10,000
1000
120
100
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0
0
0
T
J
T
= −40°C
J
25
V
V
V
= 25°C
CE
CE
CE
Figure 1. Output Characteristics
Figure 3. Output Characteristics
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1
Figure 5. Typical Capacitance
50
V
GE
= 20 to 13 V
75
2
2
100
V
GE
C
C
C
oes
res
ies
= 20 to 13 V
3
3
125
11 V
10 V
TYPICAL CHARACTERISTICS
150
9 V
11 V
8 V
4
4
175
10 V
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9 V
8 V
7 V
7 V
200
5
5
3
120
100
120
100
120
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
Figure 4. Typical Transfer Characteristics
J
Figure 6. Diode Forward Characteristics
= 150°C
V
CE
0.5
Figure 2. Output Characteristics
V
, COLLECTOR−EMITTER VOLTAGE (V)
1
GE
V
, GATE−EMITTER VOLTAGE (V)
F
, FORWARD VOLTAGE (V)
1.0
5
T
J
2
= 150°C
T
J
1.5
= 25°C
T
3
J
= 25°C
2.0
10
V
GE
T
= 20 to 11 V
J
= 125°C
4
2.5
9 V
8 V
7 V
10 V
3.0
15
5