NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 5

• Manufacturer Part Number: NGTB20N120LWG
• Description: IGBT Transistors 1200V/20A IGBT FSI TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

10,000
1000
1000
100
100
10
10
1
1
5
375
V
I
R
T
C
J
GE
G
425
15
= 20 A
V
= 150°C
= 10 W
CE
Figure 15. Switching Time vs. V
= 15 V
Figure 13. Switching Time vs. R
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
R
G
, GATE RESISTOR (W)
525
35
1000
100
575
45
10
1
1
V
Figure 17. Reverse Bias Safe Operating Area
GE
625
55
t
t
= 15 V, T
d(off)
d(on)
V
t
t
f
r
CE
t
TYPICAL CHARACTERISTICS
t
d(off)
d(on)
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
V
V
I
T
t
t
C
f
r
J
CE
GE
= 20 A
= 150°C
CE
C
10
G
= 600 V
= 15 V
= 125°C
725
75
http://onsemi.com
775
85
5
100
1000
0.01
100
0.1
10
1
7
6
5
4
3
2
1
0
1
375
V
I
R
T
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
GE
J
G
= 20 A
= 150°C
= 10 W
425
V
V
= 15 V
CE
CE
1000
dc operation
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
10
525
1 ms
575
100
625
50 ms
100 ms
675
CE
E
E
on
off
1000
725
775