STD100N10F7 STMicroelectronics, STD100N10F7 Datasheet - Page 3

• Manufacturer Part Number: STD100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W
• Manufacturer: STMicroelectronics

Specifications of STD100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 120 W

STD100N10F7, STF100N10F7, STP100N10F7
1
Electrical ratings
1. This value is rated according to R
2. Pulse width limited by safe operating area.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
R
Symbol
Symbol
R
Symbol
R
P
thj-pcb
I
thj-case
TOT
I
thj-amb
DM
V
V
I
E
T
D
D
T
DS
GS
stg
AS
(1)
(1)
J
(2)
(1)
(1)
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
Single pulse avalanche energy
(T
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Operating junction temperature
Storage temperature
J
= 25 °C, L = 3.5 mH, I
Table 2. Absolute maximum ratings
Parameter
Parameter
Table 4. Avalanche characteristics
thj-c
DocID023737 Rev 3
Table 3. Thermal resistance
pcb
and limited by package.
= 25 °C
AS
Parameter
= 15 A, V
C
C
= 25 °C
= 100 °C
DD
= 50 V, V
.
DPAK
DPAK
1.25
320
120
80
62
50
GS
= 10 V)
TO-220FP
-55 to 175
TO-220FP
Value
Value
± 20
100
180
45
32
30
5
62.50
Electrical ratings
Value
400
TO-220
TO-220
320
150
1.00
80
70
Unit
°C/W
°C/W
°C/W
Unit
mJ
Unit
°C
°C
W
V
V
A
A
A
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