STD100N10F7 STMicroelectronics, STD100N10F7 Datasheet - Page 9

• Manufacturer Part Number: STD100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W
• Manufacturer: STMicroelectronics

Specifications of STD100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 120 W

STD100N10F7, STF100N10F7, STP100N10F7
3
25 Ω
P
V
Figure 21. Unclamped inductive waveform
Figure 17. Switching times test circuit for
W
DD
Figure 19. Test circuit for inductive load
G
switching and diode recovery times
V
D
S
GS
D.U.T.
A
B
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
resistive load
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
DocID023737 Rev 3
1000
μF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Unclamped inductive load test circuit
V
P
i
V
W
0
0
i
=20V=V
Figure 22. Switching time waveform
P
Figure 18. Gate charge test circuit
w
10%
2200
μF
1kΩ
GMAX
td
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01473v1
AM01469v1
AM01471v1
1kΩ
90%
V
V
V
9/21
G
DD
DD