STF34N65M5 STMicroelectronics, STF34N65M5 Datasheet - Page 3

• Manufacturer Part Number: STF34N65M5
• Description: MOSFET N-Ch 650V 0.098 Ohm 29A MDMesh V MOS
• Manufacturer: STMicroelectronics

Specifications of STF34N65M5

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Power Dissipation: 30 W

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. I
Table 3.
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
Symbol
R
dv/dt
R
R
I
P
DM
thj-case
V
thj-amb
V
T
thj-pcb
SD
I
I
TOT
ISO
T
GS
stg
D
D
j
(1)
(2)
≤ 28 A, di/dt ≤ 400 A/µs; V
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
(1)
Parameter
C
= 25 °C)
Parameter
DS peak
C
Doc ID 022853 Rev 2
= 25 °C
< V
(BR)DSS
C
C
= 25 °C
= 100 °C
D
0.66
2
, V
30
PAK
DD
=400 V.
TO-220FP
I
2
PAKFP
3.6
TO-220
TO-247
D
I
Value
2
17.7
2
112
190
62.5
PAK
28
PAK
TO-220
- 55 to 150
I
2
PAK
Value
± 25
150
15
0.66
TO-220FP
I
2
17.7
112
PAKFP
28
2500
34.7
TO-247
Electrical ratings
(1)
(1)
50
(1)
°C/W
°C/W
°C/W
Unit
V/ns
Unit
°C
°C
W
V
A
A
A
V
3/25